Автор: Шорохов Алексей Владимирович
| Название: | Influence of dissipative tunneling on the photodielectric effect associated with the excitation of impurity complexes A(+) + e in a quasi-zero-dimensional structure | 
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| Тематика: | физико-математические науки | |
| Вид ресурса: | электронная копия бумажного издания | |
| Тип ресурса: | Статья | |
| Целевое назначение: | Научное | |
| Целевая аудитория: | Исследователь | |
| Дата издания: | 2022 | |
| Дата загрузки: | 09.11.2022 | |
| Издательство: | Университет ИТМО | |
| Название: | Temperature dependence of recombination radiation in semiconductor nanostructures with quantum dots containing impurity complexes |
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| Тематика: | физико-математические науки | |
| Вид ресурса: | электронная копия бумажного издания | |
| Тип ресурса: | Статья | |
| Целевое назначение: | Научное | |
| Целевая аудитория: | Исследователь | |
| Аннотация: | Temperature dependence of the spectral intensity of recombination radiation in a quasi-zero-dimensional structure, containing impurity complexes "A(+) +e" (a hole localized on a neutral acceptor, interacting with an electron localized in the ground state of a quantum dot), has been investigated in an external electric field in the presence of tunneling decay of a quasistationary A(+)-state. Probability of dissipative tunneling of a hole has been calculated in the one-instanton approximation, and the influence of tunneling decay and of an external electric field on the A(+)-state binding energy and on the spectra of recombination radiation, associated with the optical transition of an electron from the ground state of a quantum dot to the A(+)-state of the impurity center, has been investigated in the adiabatic approximation. "Dips" in the temperature dependence of the SIRR have been revealed, which are associated with the presence of resonant tunneling at certain values of temperature and strength of the external electric field, for which the double-well oscillatory potential becomes symmetric. | |
| Дата издания: | 2021 | |
| Дата загрузки: | 09.11.2022 | |
| Издательство: | Университет ИТМО | |
| Название: | Dissipative Tunneling of Electrons in Vertically Coupled Double Asymmetric InAs/GaAs(001) Quantum Dots |
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| Тематика: | физико-математические науки | |
| Вид ресурса: | электронная копия бумажного издания | |
| Тип ресурса: | Статья | |
| Целевое назначение: | Научное | |
| Целевая аудитория: | Исследователь | |
| Аннотация: | We report the results of experimental studies of the photoelectric properties of a p-i-n GaAs photodiode with InAs/GaAs(001) double asymmetric quantum dots (DAQDs) grown by self-assembling in the metal-organic vapor-phase epitaxy process. Three peaks were observed in the dependence of the photocurrent on the reverse bias measured at monochromatic photoexcitation of the DAQDs at the wavelength corresponding to the energy of interband optical transitions between the ground hole and electron states in the larger quantum dots (QDs). These peaks were related to the tunneling of the photoexcited electrons between the QDs, including a dissipative one (with emission and absorption of optical phonons). The experimental results agree qualitatively with the theoretical field dependence of the probability of 1D dissipative tunneling between QDs. | |
| Дата издания: | 2022 | |
| Дата загрузки: | 09.11.2022 | |
| Издательство: | Pleiades Publishing | |