Macroscopic effects of dissipative tunneling in semiconductive InAs/GaAs quantum dots

ИР получен из базы данных "Scopus" автоматически
Категория: физико-математические науки
Авторы (ПГУ): Кревчик Владимир Дмитриевич [50]  , Семенов Михаил Борисович [50]  , Зайцев Роман Владимирович [0]  , Семенов Иван Михайлович [0]  
Аннотация: Temperature effects of lD-dissipative tunneling for the two-well oscillator potential model within the strong dissipation limit for the case of semiconductor QDs of InAs, were analyzed using a combined atomic force and scanning tunneling microscope. The effect of thermal control for the amplitude of single peaks on the field dependence of the one-dimensional dissipative tunneling probability in the model under consideration was theoretically revealed. A qualitative comparison of the calculated field dependences of the lD-dissipative tunneling probability at a finite temperature within a strong coupling limit (with allowance for the influence of two local phonon modes) with experimental tunnel CVC was obtained. A fairly convincing agreement of theoretical and experimental curves was demonstrated. It is shown that in addition to temperature and external electric field, another important controlling parameter of dissipative tunneling is the type of thermostat matrix in which QDs have been synthesized, taking into account the number of local phonon modes involved in the tunneling process. © 2019 Published under licence by IOP Publishing Ltd.
Тип: Статья
Вид: электронная копия бумажного издания
Количество частей: 1
Год издания: 2019
Издательство: IOP Publishing
Место опубликования: Journal of Physics: Conference Series
Индексация: Scopus (тип документа Proceedings, Review и др.)
Целевая аудитория: Исследователь
Целевое назначение: Научное
Лицензия: Нет ограничений
Ограничения: Нет ограничений
Правообладатель: IOP Publishing
DOI: 10.1088/1742-6596/1199/1/012027
Внешняя веб-ссылка:
Язык: Английский
Место хранения:Вне ПГУ
Дата размещения:23.10.2019
Владелец:Семенов Михаил Борисович
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